- 非IC关键词
企业档案
- 相关证件：
- 会员类型：普通会员
- 周小姐
- 电话：010-64920890
- 手机：13811400355
- 地址：北京市海淀区西三旗桥东上奥世纪中心1号楼1-904
- 传真：010-64964855
- E-mail：381695427@qq.com
产品信息
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At VGG=5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=14V, VGG=0V)
• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
北京京瑞馨科技--供应全新原装射频模块、射频管！假一罚十！！！
全新原装供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
瑞萨（RENESAS）：
RQA0001DNS（RQA0001DNSTR-E）、 RQA0002DNS（RQA0002DNSTB-E）、
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
有用到的，都可以与我联系，全新原装，优势供应！