- 非IC关键词
企业档案
- 相关证件：
- 会员类型：普通会员
- 周小姐
- 电话：010-64920890
- 手机：13811400355
- 地址：北京市海淀区西三旗桥东上奥世纪中心1号楼1-904
- 传真：010-64964855
- E-mail：381695427@qq.com
产品分类
您的当前位置：北京京瑞馨科技发展有限公司 > 元器件产品
产品信息
DESCRIPT ION
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
• ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
北京京瑞馨科技--供应全新原装射频模块、射频管！假一罚十！！！
全新原装供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
瑞萨（RENESAS）：
RQA0001DNS（RQA0001DNSTR-E）、 RQA0002DNS（RQA0002DNSTB-E）、
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
• ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
北京京瑞馨科技--供应全新原装射频模块、射频管！假一罚十！！！
全新原装供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、
RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、
RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、RD01MUS1、
RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、
RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、
RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、
RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、
RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、
RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、 RA07M4452MSA、
RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、
RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、
RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、
RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、
RA01L9595M、RA01L8693MA等RA系列；
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
2SK3475(TE12L,Q)、2SK3476(TE12L,Q)、2SK3756(TE12L,Q)、
2SK4037(TE12L,Q)、2SC5066-Y(T5L,F,T)(M2)等2SC、2SK系列；
瑞萨（RENESAS）：
RQA0001DNS（RQA0001DNSTR-E）、 RQA0002DNS（RQA0002DNSTB-E）、
RQA0003DNS（RQA0003TL-E）、 RQA0004LXAQS（RQA0004LXTL-E）、
RQA0005MXAQS（RQA0005MXTL-E）、 RQA0005AQS#H1、
RQA0005QXDQS（RQA0005QXTL-E）、 RQA0008NXAQS（RQA0008NXTL-E）、
RQA0009SXAQS（RQA0009SXTL-E）、 RQA0010UXAQS（RQA0010UXAQSTL-E）、
RQA0010VXDQS（RQA0010VXDQSTL-E）、RQA0011DNS（RQA0011DNSTB-E）、
RQA0014XXAQS（RQA0014XXAQSTL-E） RQA0014XXDQS（RQA0014XXDQSTL-E）等；
M62363FP#TF0G、 M3062LFGPGP#U3C、 M3062LFGPGP#U5C等M系列
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
P0300ECL、P0300ECLRP1、P0720ECL等P系列
有用到的，都可以与我联系，全新原装，优势供应！
有用到的，都可以与我联系，全新原装，优势供应！