北京京瑞馨科技发展有限公司

DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At VGG=5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=14V, VGG=0V)
• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.

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